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| NTLJS1102P Power MOSFET -8 V, -8.1 A, mCOOL] Single P-Channel, 2x2 mm, WDFN package Features * WDFN Package with Exposed Drain Pad for Excellent Thermal * * * * * * Conduction Lowest RDS(on) in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive 2 x 2 mm Footprint Same as SC-88 Package Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Halide-Free Device This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 36 mW @ -4.5 V 45 mW @ -2.5 V -8.0 V 68 mW @ -1.8 V 90 mW @ -1.5 V 300 mW @ -1.2 V ID MAX -6.2 A -5.5 A -3.0 A -1.0 A -0.2 A Applications * High Side Load Switch * Li Ion Battery Linear Mode Charging * Optimized for Battery and Load Management Applications in Portable Equipment MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State tv5s Steady State tv5s TA = 25C Steady State TA = 85C TA = 25C tp = 10 ms ID TA = 25C TA = 85C TA = 25C TA = 25C PD 3.3 -3.7 -2.7 0.7 -30 -55 to 150 -5.5 260 A ID Symbol VDSS VGS Value -8 6 -6.2 -4.5 -8.1 1.9 W Pin 1 A Unit V V S S G D P-CHANNEL MOSFET D WDFN6 CASE 506AP MARKING DIAGRAM 1 2 J6MG G 3 6 5 4 J6 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PD IDM TJ, TSTG IS TL W A C A C D D G 1 2 3 S (Top View) D Pulsed Drain Current Operating Junction and Storage Temperature PIN CONNECTIONS 6 5 4 D D S Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2008 November, 2008 - Rev. 0 1 Publication Order Number: NTLJS1102P/D NTLJS1102P THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t v 5 s (Note 3) Junction-to-Ambient - Steady State min Pad (Note 4) Symbol RqJA RqJA RqJA Max 65 38 180 C/W Unit 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -6.2 A VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -5.5 A VGS = -2.5 V, ID = -3.0 A VGS = -1.8 V, ID = -3.0 A VGS = -1.5 V, ID = -1.0 A VGS = -1.2 V, ID = -0.2 A Forward Transconductance gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD tD(ON) tr td(OFF) tf VGS = -4.5 V, VDS = -4 V, ID = -6.2 A, RG = 1 W VGS = -4.5 V, VDS = - 4 V; ID = -6.2 A VDS = -4 V, ID = -6.2 A VGS = 0 V, f = 1 MHz, VDS = -4 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge 1585 350 185 15.7 0.8 1.9 3.3 25 nC pF VGS = 0 V, ID = -250 mA ID = -250 mA, Ref to 25C VGS = 0 V, VDS = -8V TJ = 25C TJ = 85C -8.0 -7.2 -1.0 -10 0.1 mA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 6V VGS = VDS, ID = -250 mA -0.29 2.7 25 25 34 34 45 55 80 14.3 -0.72 V mV/C 36 36 45 45 68 90 300 mW S SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 8.0 41 80 70 ns 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTLJS1102P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.0 A TJ = 25C TJ = 85C VGS = -4.5 V, VDS = -4 V, ID = -8.1 A, RG = 1 W 8.0 19 78 50 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = -1.0 A -0.6 -0.58 55 18 37 39 nC 85 ns -1.0 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures ORDERING INFORMATION Device NTLJS1102PTBG NTLJS1102PTAG Package WDFN6 (Pb-Free) WDFN6 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTLJS1102P TYPICAL CHARACTERISTICS 30 -ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 -2.0 V -1.8 V -4.5 V -2.5 V -ID, DRAIN CURRENT (A) 30 VDS = -5 V 25 20 15 10 5 TJ = 125C 4.5 5.0 0 0 TJ = -55C -1.5 V VGS = -1.2 V 3.0 3.5 4.0 TJ = 25C 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (V) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 ID = -0.2 A ID = -6.2 A TJ = 25C 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 Figure 2. Transfer Characteristics -1.2 V -1.5 V -1.8 V TJ = 25C -2.5 V VGS = -4.5 V 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.5 RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE (W) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 100 VGS = -4.5 V ID = -6.2 A IDSS, LEAKAGE (nA) 10,000 100,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage TJ = 150C TJ = 125C 1,000 TJ = 85C 1 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTLJS1102P TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25C f = 1 MHz QT -VGS -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1.0 -VGS, GATE-TO-SOURCE VOLTAGE (V) 2400 2200 2000 C, CAPACITANCE (pF) 1800 1600 1400 1200 Coss 1000 800 600 400 Crss 200 0 0 1 5 4 -VDS 3 2 QGS 1 0 5 4 3 2 VDS = -4 V ID = -6.2 A TJ = 25C 1 0 16 Ciss QGD 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (A) VGS = -4.5 V VDD = -4 V ID = -6.2 A t, TIME (ns) 100 td(off) tf tr 10 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1 TJ = 125C TJ = 25C TJ = -55C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) 10 td(on) TJ = 150C 0.1 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.8 0.7 0.6 POWER (W) -VGS(th) (V) 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 0 ID = -250 mA 50 40 30 20 10 Figure 10. Diode Forward Voltage vs. Current 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 TJ, TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 5 NTLJS1102P TYPICAL CHARACTERISTICS 100 -ID, DRAIN CURRENT (A) VGS = -6 V Single Pulse TC = 25C 10 100 ms 1 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 ms dc 10 100 0.1 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 RqJA = 65C/W 0.01 Single Pulse 1E-04 1E-03 1E-02 1E-01 t, TIME (s) 1E+00 1E+01 1E+02 1E+03 Figure 14. FET Thermal Response http://onsemi.com 6 NTLJS1102P PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP-01 ISSUE B D A B PIN ONE REFERENCE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF 2X 0.10 C 2X 0.10 C 0.10 C 7X 0.08 C D2 6X L E2 NOTE 5 K mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative III III III A3 A1 4X 1 3 A C e L2 b1 6X SEATING PLANE SOLDERING FOOTPRINT* 2.30 1.10 6X 6X 0.43 B 1 1.25 0.35 0.10 C A 0.05 C 6 4 0.60 0.35 b 6X J J1 BOTTOM VIEW 0.10 C A 0.05 C B 0.34 0.65 PITCH 0.66 DIMENSIONS: MILLIMETERS NOTE 3 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTLJS1102P/D |
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